Selected Technical Publications (2010)

1. Cryogenic operation of a 24 GHz MMIC SiGe HBT medium power amplifier
   Guoxuan Qin, Ningyue Jiang, Jung-Hun Seo, Namki Cho, George E Ponchak, Daniel van der Weide, Pingxi Ma, Scott Stetson, Marco Racanelli and Zhenqiang Ma, 2010 Semicond. Sci. Technol. 25 125002
2. SiGe BiCMOS manufacturing platform for mmWave applications
   Arjun Kar-Roy, David Howard, Edward Preisler, Marco Racanelli, Samir Chaudhry, and Volker Blaschke TowerJazz (USA), Proc. SPIE 7837, 783707 (2010); doi:10.1117/12.865210
3. Mixed-signal 0.18µm CMOS and SiGe BiCMOS foundry technologies for ROIC applications
   Arjun Kar-Roy, David Howard, Marco Racanelli, Mike Scott, Paul Hurwitz, Robert Zwingman, Samir Chaudhry, and Scott Jordan TowerJazz (USA), Proc. SPIE 7834, 78340R (2010); doi:10.1117/12.865173
4. Specialty Foundry technology and design enablement for RF, high performance analog, and power
   Chaudhry, S. Racanelli, M. TowerJazz, Newport Beach, CA, USA, Custom Integrated Circuits Conference (CICC), 2010 IEEE
5. Satellite board for flight testing of non volatile memory devices radiation sensitivity
   C.Pace; E. Della Sala, G. Capuano; S. Libertino, I. Crupi, S. Lombardo; M. Lisiansky, Y.Roizin, IEEE Trans. Instr.Measur. 2010.
6. Zero-cost MTP high density NVM modules in a CMOS process flow
   A. Atrash , G.Cassuto, W.Chen , V.Dayan, O.Galzur, M.Gutman A.Heiman , G.Hunsinger, D.Nahmad, A.Parag, E.Pikhay, Y.Roizin, B.Smith , A.Strum, T.Tishbi, R. Teggatz, IEEE IMW 2010, Seoul, Korea.
7. Non-volatile memories in the foundry business
   Avi Strum, Todd Mahlen and Yakov Roizin, IEEE IMW 2010, Seoul, Korea.
8. Radiation effects in nitride read-only memories, Radiation effects in nitride read-only memories
   S. Libertino, D. Corso, G. Mur A. Marino, F. Palumbo, F. Principato, G. Cannella, T. Schillaci, S. Giarusso, F. Celi, M. Lisiansky, Y. Roizin, S. Lombardo, Microelectronics Reliability 50 (2010) 1857–1860
9. Monitoring and characterization of Metal-over-Contact based edge-contour extraction measurement followed by electrical simulation (Proceedings Paper)
   Eitan Shauly, Israel Rotstein, Ishai Schwarzband, Ofer Edanb, Shimon Levi, SPIE 7638, 793810 (2010).
10. Device Performances Analysis of Standard-Cells transistorsusing Silicon Simulation and Build-in Device Simulation (Proceedings Paper)
    Eitan Shauly, Allon Parag, Uri Krispil, Israel Rotstein, SPIE 7641, 77641 (2010).
11. Integrated Zener Diode for Gate protection and Voltage Sourcing in Integrated Power Management Platforms
    Noel Berkovitch, Sharon Levin, Alfred Yankelevich , Alon Eyal, Shye Shapira, 2010 IEEEI 26-th Convention of Electrical and Electronics Engineers in Israel, 2010.
12. A 3–20 GHz SiGe HBT ultra-wideband LNA with gain and return loss control for multiband wireless applications
    Howard, D.C. Poh, J. Mukerjee, T.S. Cressler, J.D. Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA, Circuits and Systems (MWSCAS), 2010 53rd IEEE International Midwest Symposium, 1-4 Aug. 2010
13. A deep silicon via (DSV) ground for sige power amplifiers
    Blaschke, V. Thibeault, T. Lanzerotti, L. Cureton, C. Zwingman, R. KarRoy, A. Preisler, E. Howard, D. Racanelli, M. Jazz Semicond., Newport Beach, CA, USA, Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2010 Topical Meeting, 11-13 Jan. 2010